Hole diffusion effect on the minority trap detection and non-ideal behavior of NiO/-Ga₂O₃ heterojunction

A NiO/beta-Ga2O3 heterojunction was fabricated by sputtering a highly p-doped NiO layer onto beta-Ga2O3. This heterojunction showed a low leakage current and a high turn-on voltage (V-on) compared to a Ni/beta-Ga2O3 Schottky barrier diode. The extracted V-on from the NiO/beta-Ga2O3 heterojunction's forward current-voltage characteristics was similar to 1.64 V, which was lower than the extracted built-in potential voltage (V-bi) obtained from the capacitance-voltage curve. To explain this difference, deep level transient spectroscopy and Laplace-deep level transient spectroscopy were employed to study majority and minority traps in beta-Ga2O3 films. A minority trap was detected near the surface of beta-Ga2O3 under a reverse bias of -1 V but was not observed at -4 V, indicating its dependence on hole injection density. Using Silvaco TCAD, the hole diffusion length from P+-NiO to beta-Ga2O3 was determined to be 0.15 mu m in equilibrium, which is increased with increasing forward voltage. This finding explained why the trap level was not detected at a large reverse bias. Moreover, hole diffusion from NiO into beta-Ga2O3 significantly affected the beta-Ga2O3 surface band bending and impacted transport mechanisms. It was noted that the energy difference between the conduction band minimum (CBM) of beta-Ga2O3 and the valence band maximum (VBM) of NiO was reduced to 1.60 eV, which closely matched the extracted Von value. This supported the dominance of direct band-to-band tunneling of electrons from the CBM of beta-Ga2O3 to the VBM of NiO under forward bias voltage.