Electrostatic, linearity and analogue/RF performance analysis of single heterojunction GaAs HEMT

This study focuses on the Electrostatic, linearity, and analogue/RF parameters of a single heterojunction AlGaAs/GaAs-based high electron mobility transistor (HEMT). The device performance for multiple biases has been evaluated using different figures of merit. The Electrostatic, linearity, and analogue/RF performance have been analyzed from the on-wafer DC and RF measurements. A high ON-state current (31.72 mA) and a smaller sub-threshold swing (82.2 mV/dec) have been achieved. Parameters relating to linearities, such as g(m), g(m2), g(m3), VIP2, VIP3, IIP3, 1-dB compression point, IMD3, THD and analogue/RF parameters like TGF, g(ds), A(v), C-gs, C-gd, C-gg, f(T) and f(max) have been analyzed under different V-ds, and excellent results have been obtained for all the bias voltages. Higher values of g(m), VIP2, VIP3, IIP3, 1-dB compression point, and lower values of g(m2), g(m3), IMD3, and THD have been obtained. The RF parameters have likewise yielded significant results in a similar manner. The device is revealed to have remarkable linearity and amplifying ability upon investigating the parameters as mentioned above.