Temperature dependence of infrared photoresponse from lead sulfide film grown by chemical bath deposition

Due to the lower Auger recombination coefficient of lead salts, the study of room temperature infrared detectors based on lead salt is reemerges as a hot research topic. In this paper, we prepared polycrystalline lead sulfide (PbS) films using chemical bath deposition and fabricated a photovoltage infrared detector with Si. Different from normal PbS photodetectors, which usually show positive photoconductivity, our device demonstrated both positive and negative photoconductivity under 1550 nm laser illumination. The switching of positive and negative photoconductivity was found to be depended on temperature and applied bias. We proposed that the change of photoconductivity is due to the electron traps from S vacancies. Furthermore, we also tested the photoresponse under infrared blackbody radiation, which confirms that the device exhibits high sensitivity. The temperature dependence of PbS infrared photodetector demonstrated in this paper could be useful for applications involving focal array planes based on lead-related materials.