Design and analysis of dual-band plasmonic band pass filter using meandering step impedance resonator

In this article, we demonstrated the minimum significant dielectric thickness of silicon dioxide (SiO2) below the diffraction limit for the confinement in the metal-insulator-metal (MIM) waveguide and utilizing this idea, we further exhibited the detail design analysis of dual-band plasmonic meandering step impedance resonator (MSIR), which can achieve a high quality-factor compared to a traditional step impedance resonator (SIR). MSIRs have sharper wavelength selectivity compared to SIRs, making them more suitable for applications that require precise wavelength tuning. The tunability of reflection and transmission characteristics with respect to design parameters has been reported. The designed MSIR has demonstrated a good passband response at wavelengths lambda = 1414-nm (E-band) and 1577-nm (L-band) as well as turnability with design parameters. This filter achieved a large frequency spectral range of 139 nm and a high Q factor of similar to 3 x 10(4). This work enhances the capability of on-chip filtering in the plasmonic platform.