High-performance monolayer MoS₂ nanosheet GAA transistor

In this article, a 0.7 nm thick monolayer MoS2 nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high-kappa metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of similar to 410 mu A mu m(-1) with a large on/off ratio of 6 x 10(8) at drain voltage = 1 V. The extracted contact resistance is 0.48 +/- 0.1 k Omega mu m in monolayer MoS2 NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications.