1540 V 21.8m?cm² 4H-SiC lateral MOSFETs with DOUBLE RESURFs for power integration applications

This work demonstrates 4H-SiC lateral MOSFETs for power integrated circuits application designed with DOUBLE-RESURFs (reduced surface field) technology. Optimized by device simulation, the P-top RESURF dose was designed to be 10 x 10(12)cm(-2). Various RESURF lengths (L-RESURF) have been employed in the device manufacturing. As the result, the blocking capability of the fabricated device is significantly improved, and the highest breakdown voltage (BV) reaches 1540 V. Moreover, the best figure of merit (BFOM) achieved is 108 MW/ cm(2) with the specific ON-resistance (R-ON,R-sp) of 21.8m Omega center dot cm, which is competitive compared to these of reported SiC lateral MOSFETs'.