A stable undoped low-voltage memristor cell based on Titania (TiOx)

Fateh Ullah,Mahdi Tarkhan,Zina Fredj, Yi Su, Tianjun Wang,Mohamad Sawan

NANO EXPRESS(2024)

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摘要
An asymmetric memristive device fabricated with a titania (TiOx)-based switching layer deposited through atomic layer deposition with a thickness of similar to 37 nm was investigated. X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy coupled with energy-dispersive x-ray spectroscopy were employed for device structural characterization. A unipolar resistive switching behavior (both at positive and negative voltages) was observed through the memristor's current-voltage characteristics. A remarkably smaller forming voltage (from the top Pt electrode to the grounded Au electrode) of 0.46 V was achieved, while it approached (positive bias from the Au electrode and holding Pt electrode as grounded) 0.25 V, which is a much smaller forming voltage than has ever been reported for titanium-based oxides without doping. The retention and endurance characterization over 2000 switching cycles were satisfactory without degradation.
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关键词
low forming voltage,unipolar switching,memristor,resistive switching,asymmetric memristor structure
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