Improved Arithmetic Performance by Combining Stateful and Non-Stateful Logic in Resistive Random Access Memory 1T-1R Crossbars

ADVANCED INTELLIGENT SYSTEMS(2024)

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摘要
Computing-in-memory (CIM) is a promising approach for overcoming the memory-wall problem in conventional von-Neumann architectures. This is done by performing certain computation tasks directly in the storage subsystem without transferring data between storage and processing units. Stateful and non-stateful CIM concepts are recently attracting lots of interest, which are demonstrated as logical complete, energy efficient, and compatible with dense crossbar structures. However, sneak-path currents in passive resistive random access memory (RRAM) crossbars degrade the operation reliability and require the usage of active 1 Transistor-1 Resistance (1T-1R) bitcell designs. In this article, the arithmetic performance and reliability are investigated based on experimental measurements and variability-aware circuit simulations. Herein, it is aimed for the evaluation of logic operations specifically with fully integrated 1T-1R crossbar devices. Based on these operations, an N-bit full adder with optimized energy consumption and latency is demonstrated by combining stateful and non-stateful CIM logic styles with regard to the specific conditions in active 1T-1R RRAM crossbars. The major candidates for read- and write-based memristive computing-in-memory are investigated. By exploiting the active crossbar structure and the select transistor, it is possible to increase the reliability of in-memory operations for logic and arithmetic tasks. This is proven in failure-aware simulation and in experimental measurements on industry-grade hardware with a focus on statistical validation.image (c) 2023 WILEY-VCH GmbH
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关键词
1T-1R logics,computing-in-memory,resistive devices,valence change mechanism,Redox resistive random access memory (VCM-ReRAM)
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