A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures
arxiv(2024)
摘要
Two-dimensional (2D) materials have received a lot of interest over the past
decade. Especially van der Waals (vdW) 2D materials, such as transition metal
dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting
properties that make them highly suitable for novel device applications.
Controllable mixing and matching of the 2D materials with different properties
and a precise control of the in-plane twist angle in these heterostructures are
essential to achieve superior properties and need to be established through
large-scale device fabrication. To gain fundamental insight into the control of
these twist angles, 2D heterostructures of tungsten disulfide (WS2) and
graphene grown by bottom-up synthesis via metal-organic chemical vapor
deposition (MOCVD) are investigated using a scanning transmission electron
microscope (STEM). Specifically, the combination of conventional
high-resolution imaging with scanning nano beam diffraction (SNBD) using
advanced 4D STEM techniques is used to analyze moiré structures. The latter
technique is used to reveal the epitaxial alignment within the WS2/Gr
heterostructure, showing a direct influence of the underlying graphene layers
on the moiré formation in the subsequent WS2 layers. In particular, the
importance of grain boundaries within the underlying WS2 and Gr layers for the
formation of moiré patterns with rotation angles below 2 is discussed.
更多查看译文
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要