Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor
2023 International Electron Devices Meeting (IEDM)（2023）
Key words
Field-effect Transistors,Threshold Voltage,Hot Electrons,Bias Stress,Enhanced Device Performance,Gate Stack,Temperature Conditions,Positive Shift,Negative Shift,Gate Dielectric,Electron Trapping,Threshold Voltage Shift,Subthreshold Slope,Shallow States
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