Scaling Opportunities for Gate-All-Around: A Patterning Perspective

I. Seshadri,E. Miller, J. Church, A. Chu,J. Zhang,A. Greene,J. Frougier, T. Li, Y. Cabrera, G. Kenath, M. Burkhardt,S. Skordas, L. Meli,N. Felix

2023 International Electron Devices Meeting (IEDM)（2023）

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Key words

Gate-all-around,Insertion Point,High Numerical Aperture,Extreme Ultraviolet,Epitaxial,Depth Of Focus,High Na,Contact Patterns,Cell Height

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