Tunnel and capacitive coupling optimization in FDSOI spin-qubit devices

B. Bertrand, B. Martinez, J. Li, B. Cardoso Paz, V. Millory, V. Labracherie, L. Brévard,H. Sahin, G. Roussely, A. Sarrazin, T. Meunier, M. Vinet,Y.-M. Niquet, B. Brun, R. Maurand,S. De Franceschi, H. Niebojewski

2023 International Electron Devices Meeting (IEDM)（2023）

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摘要

We present the ongoing development towards a spin qubit platform compatible with an industrial FDSOI CMOS fabrication flow. We introduce new patterning modules to suppress the diagonal tunnel coupling in quantum dot arrays and fabricate nanowire pairs for non-invasive charge sensing. Numerical simulation of the devices provides guidelines for optimization of the detection sensitivity up to quantum computing requirements.

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关键词

Capacitive Coupling,Tunnel Coupling,Numerical Simulations,Silicon Nanowires,Single Nanowire,Back-gate Voltage,Gate Layer

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