Evaluation of (110) Versus (001) Channel Orientation for Improved Nfet/pfet Device Performance Trade-Off in Gate-All-Around Nanosheet Technology

Shogo Mochizuki,Nicolas Loubet, Pial Mirdha,Curtis Durfee,Huimei Zhou, Gen Tsusui,Julien Frougier,Reinaldo Vega,Liqiao Qin,Nelson Felix,Dechao Guo,Huiming Bu

2023 International Electron Devices Meeting (IEDM)（2023）

引用 3|浏览25

关键词

Device Performance,Channel Orientation,Nanosheet Technology,Carrier Mobility,Si Substrate,Improvement In Mobility,Change In Ratio,Epitaxial,Quantum Confinement,Quantum Confinement Effect,Improve Device Performance,Si Layer,Hole Effective Mass,Bulk Substrate

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