3D Sequential Integration with Si CMOS Stacked on 28nm Industrial FDSOI with Cu-ULK Ibeol Featuring RO and HDR Pixel

T. Mota-Frutuoso,V. Lapras,L. Brunet,L. Basset,J. Lugo,C. Fenouillet-Beranger,M. Vinet,D. Lattard,F. Boulard, Y. Exbraya, D. Boutry,O. Billoint,D. Bosch, Y. Maneglia,A. Peizerat, S. Dumas,G. Sicard,S. Kerdiles,J. Kanyandekwe,P. Sideris,V. Mazzocchi,A. Sarrazin,V. Loup,G. Mauguen,C. Morales,P. Acosta Alba,V. Balan,C. Perrot,J. Sturm,C. Euvrard,F. Aussenac, A. Janaud,J-D. Chapon,M. Guillermet, S. Guglieri,F. Bailly, P. Toresani,F. Fournel,M. Mouhdach, A. Berthoud,L-L. Chapelon,M. Ribotta,F. Ponthenier, A. Magalhaes,S. Maitrejean, C. Moulin,J. Michailos,F. Arnaud,A. Cathelin,J. Arcamone,F. Andrieu,X. Garros,F. Gaillard,P. Batude.

2023 International Electron Devices Meeting (IEDM)（2023）

Cited 2|Views20

Key words

High Dynamic Range,3D Integration,28-nm FDSOI,High Dynamic Range Pixel,High Performance,Ground Plane,End Of Line,CMOS Process,Metal Lines,Inverter,Figure Of Merit,Top-tier,Saturation Current,Thermal Budget,Back-end-of-line

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