Wavelength – Tunable Grating – Resonance InGaAs Narrowband Photodetector with Infrared Optical PCM, Antimony Triselenide (Sb2Se3)

Junho Jang, Il-Suk Kang, Yeon-Wha Oh, Sanghee Jung, Huijae Cho,SangHyeon Kim

2023 International Electron Devices Meeting (IEDM)（2023）

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摘要

We proposed a wavelength-tunable grating-resonance narrowband photodetector (PD) array designed to operate at the wavelength range of 1300 nm to 1700 nm. The PD layer with a thin InGaAs absorbing layer is bonded on the Si grating to achieve the optical resonance, and the refractive index-tunable PCM layer, formed by depositing antimony triselenide (Sb 2 Se 3 ) on the pixels, allows for wavelength tuning. Through device fabrication and measurement, we successfully demonstrate excellent wavelength selectivity based on the grating period, high responsivity peaks of about 150 mA/W, narrow FWHMs, and distinct peak shifts resulting from the phase change.

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关键词

Phase Change Materials,Narrowband Photodetectors,Phase Change,Peak Shift,Peak Response,Wavelength Selection,Wavelength Tuning,Grating Period,Amorphous,Resonance Frequency,Fabrication Process,Monochromator,Crystalline Phase,Photocurrent,Detection Wavelength,Spectral Response,Focused Ion Beam,Peak Wavelength,Optical Changes,Pixel Array,Rapid Thermal Annealing,Nm-thick Layer,Subsequent Etching,Tm Peak,Excellent Transparency

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