Investigations and modeling aspects of the influence of the high energy and high dose implantation on the optical and transport parameters of implanted layers in silicon

This paper presents results of investigations and modeling aspects of the influence of Ge+ high energy (100 keV) and high dose (1014 cm−2) implantation on the optical and recombination parameters of implanted layers in silicon. The nondestructive and contactless MFCA (Modulated Free Carrier Absorption) method was used as it is sensitive to changes of these parameters expected for implanted layers. Several model cases describing the MFCA spectrum as a function of the energy of photons of the excitation laser light are presented, compared and discussed. The simplified one-layer model and the full two-layer model of the MFCA signal have been analyzed and compared. The possibility and correctness of determination of the optical absorption coefficient spectra of the implanted layers with the use of the one-layer simplified model has been discussed.