Forming-Free and Non-linear Resistive Switching in Bilayer HfO_x / TaO_x Memory Devices by Interface-Induced Internal Resistance
ELECTRONIC MATERIALS LETTERS（2024）
Key words
Resistive switching,Memory devices,Oxides,Atomic layer deposition
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined