Epitaxial Indium on PbTe Nanowires for Quantum Devices
arxiv(2024)
摘要
Superconductivity in semiconductor nanostructures contains fascinating
physics due to the interplay between Andreev reflection, spin, and orbital
interactions. New material hybrids can access new quantum regimes and
phenomena. Here, we report the realization of epitaxial indium thin films on
PbTe nanowires.The film is continuous and forms an atomically sharp interface
with PbTe.Tunneling devices reveal a hard superconducting gap.The gap size,
1.08 to 1.18 meV, is twice as large as bulk indium (around 0.5 meV), due to the
presence of PbTe. A similar enhancement is also observed in the critical
temperature of In on a PbTe substrate. Zero bias conductance peaks appear at
finite magnetic fields. The effective g-factor (15 to 45) is notably enhanced
compared to bare PbTe wires (less than 10) due to the presence of In, differing
from Al-hybrids. Josephson devices exhibit gate-tunable supercurrents. The
PbTe-In hybrid enhances the properties of both, the superconductivity of In and
g-factors of PbTe, and thus may enable exotic phases of matter such as
topological superconductivity.
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