Parallelization of Silicon-Carbide MOSFET and Silicon IGBT: Challenges to Obtain a Cost-Effective Hybrid Switch

The application of hybrid semiconductor switches (HyS) emerges as a solution to the increasing demand for higher switching frequency and power density at a competitive cost. This paper investigates a HyS based on Si-IGBT (siliconinsulated gate bipolar transistor) in parallel with a SiC-MOSFET (silicon carbide-metal oxide semiconductor field effect transistor), highlighting the main characteristics and challenges to obtain a cost-effective device. Simulations in PLECS and LT-Spice illustrate and support the important interaction phenomenon in the investigated HyS. Finally, some insights on this technology are provided.