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Low Surface Recombination in Hexagonal SiGe Alloy Nanowires: Implications for SiGe-Based Nanolasers.

Wilhelmus J. H. Willem-Jan Berghuis,Marvin A. J. van Tilburg,Wouter H. J. Peeters,Victor T. van Lange,Riccardo Farina,Elham M. T. Fadaly, Elsa C. M. Renirie,Roel J. Theeuwes,Marcel. A. Verheijen,Bart Macco,Erik P. A. M. Bakkers,Jos E. M. Haverkort,Wilhelmus M. M. Erwin Kessels

ACS Applied Nano Materials（2024）

Cited 3|Views25
Key words
nanowires,hexagonal SiGe,surface passivation,SiGe,silicon photonics,surface recombinationvelocity,atomic layer deposition,direct bandgap
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