Localization effect in single crystal of RuAs₂

Abstract We report the magnetotransport and thermal properties of RuAs2 single crystal. RuAs2 exhibits semiconductor behavior and localization effect. The crossover from normal state to diffusive transport in the weak localization (WL) state and then to variable range hopping (VRH) transport in the strong localization state has been observed. The transitions can be reflected in the measurement of resistivity and Seebeck coefficient. Negative magnetoresistance (NMR) emerges with the appearance of localization effect and is gradually suppressed in high magnetic field. The temperature dependent phase coherence length extracted from the fittings of NMR also indicates the transition from WL to VRH. The measurement of Hall effect reveals an anomaly of temperature dependent carrier concentration caused by localization effect. Our findings show that RuAs2 is a suitable platform to study the localized state.