Impact of the switching mode on the read noise of ReRAM devices.

Valence change mechanism (VCM)-based memristive devices are interesting candidates for computing in memory and neuromorphic applications. For these devices read noise is a characteristic which is influenced by a variety of factors like the switching mode, namely the area-dependent and the filamentary mode. In this paper we use TiOx-based devices as an example system exhibiting both modes. This allows to only investigate the effect of the modes while excluding other influences. We find that the read noise in the area-dependent mode is lower than for the filamentary mode and that abrupt current jumps are primarily seen for the filamentary mode. This has to be taken into account when choosing the right operation mode for a specific application.