Advances in two-dimensional heterojunction for sophisticated memristors

Shiwei Qin, Ye Tao, Ting Hu, Shaojie Zhang, Chenying Feng,Lin Lv,Guokun Ma,Yiheng Rao,Liangping Shen,Houzhao Wan,Hao Wang

Materials Today Physics(2024)

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摘要
Memristors offer vast application opportunities in storage, logic devices, and computation due to their non-volatility, low power consumption, and fast operational speeds. Two-dimensional materials, characterized by their novel mechanisms, ultra-thin channels, high mechanical flexibility, and superior electrical properties, demonstrate immense potential in the domain of high-density, fast, and energy-efficient memristors. Heterostructures made of two-dimensional materials combine the physical, chemical, and mechanical properties of different two-dimensional materials, setting the stage for notable developmental prospects. This article summarizes the research progress of two-dimensional material heterostructure memristors in recent years, the application of two-dimensional materials and their heterostructures in the manufacturing of memristors and their physical switching mechanisms, and puts forward several prospects for their future development.
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关键词
Two-dimensional material,Heterojunction,Memristor,Rheostatic mechanism,Transition metal dichalcogenide
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