6 /N

An insulation design rule for spacer in SF6/N2-filled DC gas insulated apparatus

CSEE Journal of Power and Energy Systems(2020)

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摘要
A recurring challenge of a DC SF 6 /N 2 -filled GIS/GIL apparatus is the charge accumulation at DC stress. The conventional design rules and knowledge of AC spacers may not be applicable for this new type of apparatus. A novel design rule is proposed considering the effect of accumulated charge on the threshold of electric field strength resistant to the superposed voltage. A surface charge accumulation simulation model is introduced, and the key parameters in the simulation model are measured. In addition, an experimental platform for a 100 kV spacer flashover test is established. Spacer flashover tests under superimposed voltage with opposing polarities are carried out, and the withstanding voltage of the spacer is obtained. Finally, based on the proposed model, the threshold of the surface electric field strength (tangential component) on the DC spacer in SF 6 /N 2 mixed gases is discussed. For the reliable insulation design of a DC GIS/GIL apparatus filled with 0.7 MPa SF 6 /N 2 , the threshold of surface electric field strength on the DC spacer is 12 kV/mm. The insulation design rule can be referenced in the design of a high-voltage DC SF 6 /N 2 -filled GIS/GIL apparatus.
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关键词
DC spacer,SF6/N2,charge accumulation,flashover voltage,threshold of surface electric field strength
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