Total Ionizing Dose Response of 128 Analog States in Computational Charge-Trap Memory
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2024）
关键词
SONOS devices,Threshold voltage,Current measurement,System-on-chip,Logic gates,Transistors,Total ionizing dose,Analog computing,charge trap memory,flash memory,in-memory computing (IMC),neural networks,silicon-oxide-nitride-oxide-silicon (SONOS),total ionizing dose (TID)
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