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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

IEEE Transactions on Electron Devices(2024)

Cited 0|Views21
Key words
1/f noise,characterization,complemen- tary field-effect transistor (CFET),replacement metal gate (RMG),sequential 3-D
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