A Source Segmented LDMOS Structure for Improving Single Event Burnout Tolerance Based on High-Voltage BCD Process
IEEE Transactions on Device and Materials Reliability（2024）
关键词
Doping,Electric fields,Materials reliability,Threshold voltage,Junctions,High-voltage techniques,Breakdown voltage,Laterally diffused MOS (LDMOS),single event burnout (SEB),SEB triggering voltage,high voltage integrated circuit (HVIC)
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