Side-Channel Attack Resilient RHBD 12T SRAM Cell for Secure Nuclear Environment

Extremely energetic particles in the nuclear environment make memory cells prone to soft errors. Also, attackersextract secret data of SRAM cells via side-channel attacks(SCAs), and leakage power analysis attacks (LPAs) seriouslythreaten security systems. This paper indicates a highly effectiveradiation-hardened and LPA-resilient (RHLR12T) SRAM cellthat is both radiation-resistant by design and LPA-resilient fornuclear applications. It offers better speed, enhanced writingstability and higher overlap percentage than other consideredSRAM cells, such as 6T, Quatro, We-Quatro, and RHMD10T,utilising United Microelectronics Corporation (UMC) 45nmCMOS technology at the supply voltage of 1.0V and 27 degrees Coperating temperature. The proposed cell gives 1.141xhigherwrite stability, 1.55xlower write access time, 1.11xincreasedcritical charge and 1.51xbetter overlap percentage than theRHMD10T SRAM cell.