A Low-Power High-IP $_{\mathrm{1dB}}$ Low-Noise Amplifier Using Large-Transistor and Class-AB Mode

Min-Seok Baek,Han-Woong Choi,Joon-Hyung Kim,Jae-Hyeok Song,Jae-Eun Lee, Jeong-Taek Son,Choul-Young Kim

IEEE Microwave and Wireless Technology Letters（2024）

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摘要

This letter presents a Ku -band high-input 1-dB compression point (IP

$_{\mathrm{1dB}}$

) and low-power low-noise amplifier (LNA). The large-transistor technique is employed to enhance IP

$_{\mathrm{1dB}}$

with low noise figure (NF) for first stage. Differential Class-AB topology is adopted to improve the output 1-dB compression point (OP1dB) and lower power consumption for output stage. To validate the proposed approach, we implemented a two-stage common-source (CS) LNA using 65-nm bulk complementary metal–oxide–semiconductor (CMOS) technology. Experimental results achieved a minimum NF of 1.94 dB and peak gain of 19.98 dB. The measured IP

$_{\mathrm{1dB}}$

$-$

7.8 dBm at 13 GHz, the highest among modern CMOS Ku -band LNAs. The LNA operates with a power consumption of 10 mA at a 1-V supply voltage and occupies a compact core size of 0.80

$\times$

0.26 mm

$^{2}$

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关键词

Class AB,complementary metal–oxide–semiconductor (CMOS),gain extension,Ku-band,large transistor,P1dB,single-to-differential low-noise amplifier (LNA)

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