Investigation on Dynamic Characteristic Variations Caused by TID for SiC MOSFET Power Devices
2023 5th International Conference on Radiation Effects of Electronic Devices (ICREED)(2023)
摘要
The dynamic characteristics of silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) power devices is examined after exposure to a total ionizing dose (TID). The dynamic characteristics studied in this paper refer to the capacitive characteristics. The results for ON bias are explored. The irradiated device shows gate-drain capacitive (C
GD
) characteristic curves shift positively and gate-source capacitive (C
GS
) characteristic curves shift negatively. The physical mechanisms for these variations are analyzed and confirmed by technology computer-aided design (TCAD) simulation.
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关键词
SiC MOSFET,TID,Static Characteristic,Dynamic Characteristic,TCAD Simulations
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