The structures, electronic and photoelectronic properties of the line defects in two-dimensional Bi2O2Se

Wenhui Hu, Yaoyu He,Zhi Yang,Li-Chun Xu,Lin Xue,Ruiping Liu,Xuguang Liu

Applied Surface Science（2024）

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摘要

•The line defects in 2D Bi2O2Se can exhibit typical metallized phenomena or change the band gap significantly.•Compared with the perfect 2D Bi2O2Se, some line defects can enhance the photocurrents in the infrared and ultraviolet regions.•The polarization sensitivity of 2D Bi2O2Se can be improved by the line defects.

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关键词

2D Bi2O2Se,Line defects,Electronic properties,Photoelectronic properties

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