Vertical -Ga₂O₃ metal-insulator-semiconductor diodes with an ultrathin boron nitride interlayer

In this work, we demonstrate the high performance of beta-Ga2O3 metal-insulator-semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.