Impact of temperature variation on linearity parameters of nanotube surrounding gate (NT-SG) MOSFETs

The work investigates the effect of temperature variation on the linearity performance of Nanotube Junctionless Surrounding Gate (NT-SG) MOSFET. In this study, the linearity parameters of NT-SG MOSFET is investigated by changing the temperature range from 300 to 500 K using the Silvaco 3D Simulator. For the specified temperature range, characteristics including high-order trans-conductance (gm2 and gm3), IIP3, VIP3, and VIP2 have been assessed. All of these metrics exhibit great linearity and little distortion at the NT-SG MOSFET's zero crossover point for Vds = 0.01 V. The VIP2 and VIP3 are found to be increased when the temperature range increases from 300 to 500 K and thus the device is found to be more suitable for high-frequency applications. In addition to this, the NT-SG MOSFET manifests enhanced analog performance and is also more immune toward SCEs.