Effects of Al₂O₃Interfacial Layer Thicknessfor HZO/InGaAs Ferroelectric CapacitorsWith Superior Polarization andMOS Interface Properties

A ferroelectric device with a III-V semi-conductor is one of the promising candidates for high-performance and energy-efficient electronic and photonic applications. These applications require high remanent polarization and low interface trap density.Here, we examined the ferroelectric characteristic andMOS interface property for the InGaAs metal-ferroelectric-insulator-semiconductor (MFIS) ferroelectric capacitor withvarying Al2O3interfacial layer (IL) thickness and crystalliza-tion temperature. We found that the atomic layer deposition(ALD)-deposited HfO2/ZrO2(HZO) nanolaminates are wellcrystallized with a (111)-oriented orthorhombic phase on InGaAs crystals at the low crystallization temperature of400(degrees)C. By optimizing the IL thickness and crystallizationtemperature, the InGaAs MFIS ferroelectric capacitorachieves a high remanent polarization while maintaining alow interface trap density. Furthermore, the InGaAs MFISferroelectric capacitor also presents good retention over104s and endurance in 10(5)-10(6)cycles at 10 kHz