Analytical modelling and reliability analysis of charge plasma-assisted Mg₂Si/Si heterojunction doping less DGTFET for low-power switching applications

Fabrication of tunnel field effect transistor (TFET) confronts various challenges, one of which is random dopant fluctuation (RDF), which diminishes the benefits associated with low subthreshold swing (SS) and high I-ON/I-OFF ratio. By conducting physics-based 2D analytical modelling, this paper proposes a magnesium silicide/silicon (Mg2Si/Si) heterojunction-based doping less double gate tunnel field effect transistor (HB-DL-DGTFET). This work utilizes the concept of charge plasma to tackle the issues of RDF. The analytical analysis in this study is based upon the determination of the center-channel potential by solving 2D Poisson's equation, considering appropriate boundary conditions. Here, surface potential, electric field, energy bands, drain current and threshold voltage are extracted mathematically. In addition to the aforementioned parameters, several other analog performance parameters like transconductance, drain conductance, device efficiency, intrinsic gain, output resistance and channel resistance have also been studied in this context. The analytical findings have been duly validated using the ATLAS TCAD device simulator. Furthermore, this work focuses on exploring proposed device reliability through an investigation of, the influence of interface trap charges (ITC), present at the Si/SiO2 interface. The study analyses ITC's impact on analog performance and the obtained results are compared with that of conventional doping less DGTFET (C-DL-DGTFET). The simulation results reveal that HB-DL-DGTFET exhibits greater immunity against ITC. Thus, validating the potential of HB-DL-DGTFET as a superior candidate for low-power switching applications.