Optoelectronic properties of Ge<sub>1−</sub><i><sub>x</sub></i>Sn<i><sub>x</sub></i>/high-Si-content Si<i><sub>y</sub></i>Ge<sub>1−</sub><i><sub>y</sub></i><sub>−</sub><i> <sub>z</sub></i>Sn<i><sub>z</sub></i> double quantum wells formed by low-temperature MBE growth and post deposition annealing
Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials（2023）
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