Gate-Length Dependent Variability of nMOSFET at Cryogenic TemperaturesToshitsugu Sakamoto, Makoto Miyamura, Kazunori Funahashi,Munehiro Tada,Ken Uchida,Hiroki IshikuroExtended Abstracts of the 2023 International Conference on Solid State Devices and Materials（2023）引用 0|浏览1暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
