Low voltage operation of organic thin-film transistor with atmospheric coating of high-k polymer dielectric

We investigated high-k polymers as gate dielectrics to develop an atmospheric-pressure process for organic transistors. A high-k terpolymer, p(VDF-TrFE-CFE), was formed by drop-casting. Self-assembled molecules (SAM) of triptycene derivatives have been utilized as surface modifiers for high-k gate dielectrics to improve the transistor characteristics. High-k terpolymers reduce the operating voltage of organic thin-film transistors (TFTs) by up to 2.5 V to their high capacities. Introducing a SAM onto the gate dielectric surface improved the organic TFTs' mobility by more than three orders of magnitude. In addition, a terpolymer and a SAM can be formed simultaneously by drop-casting. This atmospheric processing of the gate dielectric is expected to contribute to organic electronics in large-area or mass production, such as roll-to-roll processes.