Atomic and Electronic Structures of Basal Plane Dislocations (BPDs) in 4H-SiC -Atomistic Origin of Bipolar Degradation of SiC Devices-

Masaki Sano,Jun Kojima,Shoichi Onda, Takashi Yoda, Takayuki Ohba,Kenji Shiraishi

Extended Abstracts of the 2023 International Conference on Solid State Devices and Materials（2023）

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