Tuning the band gap of the CIGS solar buffer layer Cd 1− x Zn x S ( x =0–1) to achieve high efficiency

To evaluate the impact of zinc sulfate (ZnSO 4 ) concentration on the structural properties of the films, Cd 1− x Zn x S thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO 4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd 1− x Zn x S films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In 1− x Ga x )Se 2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.