Monitoring Current of a GaN HEMT at Ultra-High Magnetic Fields

Brett Setera,Aristos Christou,Natalia Gudino

2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)（2023）

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摘要

The performance of commercially available GaN HEMT and LDMOS devices were investigated inside ultra-high static magnetic fields. Device performance was assessed by measuring output current for its use in innovative on-coil current-source, switch mode power amplifiers in ultra-high field MRI.

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关键词

GaN,MRI,magnetic field,robustness

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