Common Mistakes in Practical Power Supply Design with Wide Bandgap Devices

2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)(2023)

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摘要
Power electronics engineers are motivated to design the next generation power supply with wide bandgap (WBG) devices as they offer better figure-of-merits over Silicon devices. However, several common mistakes have been observed in practical WBG-based power supply designs which do not necessarily cause problems with Silicon devices. Those common mistakes are related to fast switching speed in WBG devices. This paper summarizes some of the mistakes, explains the root causes, and provides solutions.
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关键词
Gallium Nitride (GaN),Common source inductance (CSI),Silicon Carbide (SiC),Common mode transient immunity (CMTI)
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