Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes

J. Navrátil, O. Caha, J. Kopeček, P. Čermák, J. Prokleška, V. Holý, V. Sechovský, L. Beneš, K. Carva, J. Honolka, Č. Drašar

Materials Science and Engineering: B（2024）

引用 0|浏览1

暂无评分

摘要

•Doping iron interacts with native defects in SnS.•Fe-doping reveals high hole mobility in SnS.•Carrier mobility is largely insensitive to the doping process and increasing mosaicity.•The dominant charge carrier scattering at higher temperatures is scattering on homopolar optical phonons.

查看译文

关键词

p-type SnS,Single crystal,Semiconductor,Doping,Electrical properties

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要