Enhanced Responsivity of Solar Blind Ultraviolet Photodetector by PEALD Deposited Zn-Doped Ga₂O₃ Thin Films

In this article, the tunable Zn-doped Ga2O3 films were obtained by introducing ZnO intercalation during the film deposition using plasma-enhanced atomic layer deposition (PEALD). The effect of the ZnO cycle ratio on the performance of solar-blind photodetectors (PDs) was first analyzed. Compared to the pure Ga2O3 , an obviously enhanced performance of Zn-doped Ga2O3 films PDs was observed by the introduction of Zn dopants, especially photocurrent or responsivity, even if the light intensity is low. A high sensitivity of Zn-doped Ga2O3 PD has been achieved with superior photoelectric characteristics for an extremely low dark current of 2.22 x 10( -13) A, an ultrahigh light ON/OFF current ratio of 2.89 x 10(6) , and a satisfactory responsivity of 10(4 )mA/W when the ZnO cycle ratio is 5%. The above excellent results imply that the Zn-doped Ga 2 O 3 PD can be greatly beneficial to the application in deep-ultraviolet (DUV) detection.