Numerical simulation of copper electrodeposition for Through Silicon Via (TSV) with SPS-PEG-Cl additive system

Through silicon via (TSV) technology is crucial for modern semiconductor device package, enabling highperformance integrated microsystems. This paper investigates the mechanism of the bottom-up copper deposition process in TSV, leveraging a co-adsorbed polyether-Cl-suppression layer and accelerators for optimized filling profiles. We present numerical simulations of the effects of additives (accelerator, suppressor) and chloride ions (Cl- ) on the TSV filling. By varying the substance concentration, we obtain three distinct filling models, including filling with voids, conformal filling and bottom-up filling. We analyzed the distribution of various substances and current densities to elucidate the filling mechanism. Furthermore, TSV filling experiments were conducted, and the simulated profiles were in good match with the filling experiments. It is verified that the feasibility of the proposed numerical model by generalizing to 90 mu m x 180 mu m, 50 mu m x 100 mu m, and 10 mu m x 100 mu m via holes of different sizes and aspect ratios.