Weak effects of electron-phonon interactions on the lattice thermal conductivity of wurtzite GaN with high electron concentrations
arxiv(2024)
摘要
Wurtzite gallium nitride (GaN) has great potential for high-frequency and
high-power applications due to its excellent electrical and thermal transport
properties. However, enhancing the performance of GaN-based power electronics
relies on heavy doping. Previous studies showed that electron-phonon
interactions have strong effects on the lattice thermal conductivity of GaN due
to the Fröhlich interaction. Surprisingly, our investigation reveals weak
effects of electron-phonon interactions on the lattice thermal conductivity of
n-type GaN at ultra-high electron concentrations and the impact of the
Fröhlich interaction can be ignored. The small phonon-electron scattering
rate is attributed to the limited scattering channels, quantified by the Fermi
surface nesting function. In contrast, there is a significant reduction in the
lattice thermal conductivity of p-type GaN at high hole concentrations due to
the relatively larger Fermi surface nesting function. Meanwhile, as p-type GaN
has relatively smaller electron-phonon matrix elements, the reduction in
lattice thermal conductivity is still weaker than that observed in p-type
silicon. Our work provides a deep understanding of thermal transport in doped
GaN and the conclusions can be further extended to other wide-bandgap
semiconductors, including β-Ga2O3, AlN, and ZnO.
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