Phase transitions in ferroelectric ZrO2 thin films

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING(2024)

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摘要
In this work, the formation of the orthorhombic phase of ZrO2 together with the minor monoclinic phase were elucidated by X-ray diffraction and transmission electron microscopy. Moreover, oxidized W can be responsible for the formation of oxygen vacancies in the ZrO2 through oxygen scavenging. The ferroelectric properties of the W/ZrO2/W film capacitors were investigated through piezoresponse force microscopy (PFM) and polarizationvoltage measurements. A second-order phase transition from the polar orthorhombic phase to the non-polar tetragonal phase was observed. Density functional theory calculations confirm our experimental results and propose that oxygen vacancies are responsible for the Curie-Weiss temperature of 130 degrees C, significantly lower than the theoretical value for the bulk.
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关键词
Orthorhombic ZrO2,Phase transitions,Ferroelectricity,Oxygen vacancies
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