Unveiling the Potential of Infrared Thermography in Quantitative Investigation of Potential-Induced Degradation in Crystalline Silicon PV Module

•Medium input current under steady-state conditions serves as the optimal condition for quantitative investigation of potential-induced degradation shunting using inverse infrared thermography•Inverse infrared thermography assists in assessing the severity of potential-induced degradation shunting by analysing the pixelwise temperature distribution on the surface of a photovoltaic cell•A Statistical density estimation tool is applied to the pixelwise temperature distribution to define the potential-induced degradation shunting severity index