Improvement of Thermal Dissipation of High-Power Photodiodes

2023 IEEE PHOTONICS CONFERENCE, IPC(2023)

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摘要
An n-down MUTC epitaxial structure is designed to improve thermal dissipation. The thermal performance of n-down devices has been simulated. The n-down devices flip-chip bonded to heat sinks are demonstrated to improve thermal characteristics and presage higher RF output power before thermal failure.
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关键词
uni-traveling carrier photodiodes,InGaAs/InP,thermal dissipation
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