Synthesis and characterization of c-TiAlN/h-Cr2N multilayer films deposited by magnetron sputtering on Si (100) substrates

A series of c-TiAlN/ h-Cr2N multilayer films with modulation periods Lambda of 10, 20 and 30 nm and thickness ratios (Cr2N thickness /Lambda) of 25%, 50% and 75% were prepared by dc magnetron sputtering on the Si substrate. The microstructures were characterized by scanning electron microscopy, x-ray diffraction, and the mechanical properties were measured by curvature measurement method and nanoindentation. With the Cr2N ratio increasing from 25% to 75%, the orientation of Cr2N layers changed from a randomly orientation to a 0001 preferential orientation, while inversely, the c-TiAlN layer changed from a 001 preferential orientation to a 111 preferential orientation or a randomly orientation. In the meantime, and regardless of the modulation period, the lattice parameter of c-TiAlN decreased from 4.16 angstrom to 4.12 angstrom and was explained by an increase of tensile stress between + 0.2 and + 1.3 GPa when the increase of Cr2N% in the modulation. With the increase of Cr2N ratio, the morphology of the film changed and led to surface with apparent porosity and large grain sizes of 100 x 300 nm. The film with 25% Cr2N ratio and modulation period of 20 nm exhibited the highest hardness reaching 22 +/- 1.3 GPa and reduced Young's modulus of 253 +/- 6 GPa.